Semiconductor device and method for manufacturing same

ABSTRACT

According to one embodiment, a source layer includes a semiconductor layer including an impurity. A stacked body includes a plurality of electrode layers stacked with an insulator interposed. A gate layer is provided between the source layer and the stacked body. The gate layer is thicker than a thickness of one layer of the electrode layers. A semiconductor body extends in a stacking direction of the stacked body through the stacked body and the gate layer. The semiconductor body further extends in the semiconductor layer where a side wall portion of the semiconductor body contacts the semiconductor layer. The semiconductor body does not contact the electrode layers and the gate layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of and claims the benefit of priorityunder 35 U.S.C. § 120 from U.S. application Ser. No. 16/844,026 filedApr. 9, 2020, which is a continuation of U.S. application Ser. No.16/438,769 filed Jun. 12, 2019 (now U.S. Pat. No. 10,651,199 issued May12, 2020), which is a continuation of U.S. application Ser. No.16/040,292 filed Jul. 19, 2018 (now U.S. Pat. No. 10,361,218 issued Jul.23, 2019), which is a continuation-in-part of U.S. patent applicationSer. No. 15/695,252 filed Sep. 5, 2017, which claims the benefit ofpriority under 35 U.S.C. § 119 from Japanese Patent Application No.2017-036973 filed Feb. 28, 2017, the entire contents of each of whichare incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a semiconductor deviceand a method for manufacturing a semiconductor device.

BACKGROUND

Three-dimensional memory has been proposed to have a structure in whicha side wall of a channel body piercing a stacked body including multipleelectrode layers contacts a source layer provided under the stackedbody.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic perspective view of a semiconductor device of anembodiment;

FIG. 2 is a schematic cross-sectional view of the semiconductor deviceof the embodiment;

FIG. 3 is an enlarged cross-sectional view of portion A of FIG. 2;

FIG. 4 to FIG. 17 are schematic cross-sectional views showing a methodfor manufacturing the semiconductor device of the embodiment;

FIG. 18 is a schematic cross-sectional view of the semiconductor deviceof the embodiment;

FIG. 19 to FIG. 21 are schematic cross-sectional views of asemiconductor device of another embodiment;

FIG. 22 is a schematic view showing a plane pattern of a gate layer ofthe other embodiment; and

FIG. 23 is a schematic cross-sectional view of the semiconductor deviceof the other embodiment.

DETAILED DESCRIPTION

According to one embodiment, a semiconductor device includes a sourcelayer, a stacked body, a gate layer, a semiconductor body, and a chargestorage portion. The source layer includes a semiconductor layerincluding an impurity. The stacked body is provided above the sourcelayer. The stacked body includes a plurality of electrode layers stackedwith an insulator interposed. The gate layer is provided between thesource layer and the stacked body. The gate layer is thicker than athickness of one layer of the electrode layers. The semiconductor bodyextends in a stacking direction of the stacked body through the stackedbody and the gate layer. The semiconductor body further extends in thesemiconductor layer where a side wall portion of the semiconductor bodycontacts the semiconductor layer. The semiconductor body does notcontact the electrode layers and the gate layer. The charge storageportion is provided between the semiconductor body and one of theelectrode layers.

In an embodiment, for example, a semiconductor memory device thatincludes a memory cell array having a three-dimensional structure isdescribed as a semiconductor device.

FIG. 1 is a schematic perspective view of a memory cell array 1 of anembodiment.

FIG. 2 is a schematic cross-sectional view of the memory cell array 1.

In FIG. 1, two mutually-orthogonal directions parallel to a majorsurface of a substrate 10 are taken as an X-direction and a Y-direction;and a direction orthogonal to both the X-direction and the Y-directionis taken as a Z-direction (the stacking direction). The Y-direction andthe Z-direction of FIG. 2 correspond respectively to the Y-direction andthe Z-direction of FIG. 1.

The memory cell array 1 includes a source layer SL, a stacked body 100provided on the source layer SL, a gate layer 80 provided between thesource layer SL and the stacked body 100, multiple columnar portions CL,multiple separation portions 160, and multiple bit lines BL providedabove the stacked body 100. The source layer SL is provided on thesubstrate 10 with an insulating layer 41 interposed. The substrate 10is, for example, a silicon substrate.

The columnar portions CL are formed in substantially circular columnarconfigurations extending through the stacked body 100 in the stackingdirection (the Z-direction). The columnar portions CL further pierce thegate layer 80 under the stacked body 100 and reach the source layer SL.The multiple columnar portions CL have, for example, a staggeredarrangement. Or, the multiple columnar portions CL may have a squarelattice arrangement along the X-direction and the Y-direction.

The separation portions 160 separate the stacked body 100 and the gatelayer 80 into multiple blocks (or finger portions) in the Y-direction.The separation portions 160 have a structure in which an insulating film163 is filled into slits ST shown in FIG. 17 described below.

The multiple bit lines BL extend in the Y-direction and are, forexample, metal films. The multiple bit lines BL are separated from eachother in the X-direction.

Upper end portions of semiconductor bodies 20 of the columnar portionsCL described below are connected to the bit lines BL via contacts Cb andcontacts V1 shown in FIG. 1.

As shown in FIG. 2, the source layer SL includes semiconductor layers 12to 14, and a layer 11 including a metal.

The layer 11 that includes the metal is provided on the insulating layer41. The layer 11 that includes the metal is, for example, a tungstenlayer or a tungsten silicide layer.

The semiconductor layer 12 is provided on the layer 11 including themetal; the semiconductor layer 13 is provided on the semiconductor layer12; and the semiconductor layer 14 is provided on the semiconductorlayer 13.

The semiconductor layers 12 to 14 are polycrystalline silicon layersthat are conductive and include an impurity. The semiconductor layers 12to 14 are, for example, n-type polycrystalline silicon layers doped withphosphorus. The semiconductor layer 14 may be an undoped polycrystallinesilicon layer in which an impurity is not doped intentionally. Thethickness of the semiconductor layer 14 is thinner than the thickness ofthe semiconductor layer 12 and the thickness of the semiconductor layer13.

An insulating layer 44 is provided on the semiconductor layer 14; andthe gate layer 80 is provided on the insulating layer 44. The gate layer80 is a polycrystalline silicon layer that is conductive and includes animpurity. The gate layer 80 is, for example, an n-type polycrystallinesilicon layer doped with phosphorus. The thickness of the gate layer 80is thicker than the thickness of the semiconductor layer 14.

The stacked body 100 is provided on the gate layer 80. The stacked body100 includes multiple electrode layers 70 stacked in a direction (theZ-direction) perpendicular to the major surface of the substrate 10.Insulating layers (insulators) 72 are provided between the electrodelayers 70 adjacent to each other above and below. The insulating layer72 is provided between the gate layer 80 and the electrode layer 70 ofthe lowermost layer. An insulating layer 45 is provided on the electrodelayer 70 of the uppermost layer.

The electrode layer 70 is a metal layer. The electrode layer 70 is, forexample, a tungsten layer including tungsten as a major component or amolybdenum layer including molybdenum as a major component. Theinsulating layer 72 is a silicon oxide layer including silicon oxide asa major component.

The electrode layer 70 of at least the uppermost layer of the multipleelectrode layers 70 is a drain-side selection gate SGD of a drain-sideselection transistor STD (FIG. 1); and the electrode layer 70 of atleast the lowermost layer of the multiple electrode layers 70 is asource-side selection gate SGS of a source-side selection transistor STS(FIG. 1). For example, the electrode layers 70 of multiple layers (e.g.,three layers) on the lower layer side including the electrode layer 70of the lowermost layer are the source-side selection gate SGS. Multiplelayers may be provided also in the drain-side selection gate SGD.

Multiple layers of electrode layers 70 are provided as cell gates CGbetween the drain-side selection gate SGD and the source-side selectiongate SGS.

The gate layer 80 is thicker than the thickness of one layer of theelectrode layers 70 and the thickness of one layer of the insulatinglayers 72. Accordingly, the gate layer 80 is thicker than the thicknessof one layer of the drain-side selection gate SGD, the thickness of onelayer of the source-side selection gate SGS, and the thickness of onelayer of the cell gates CG.

The multiple columnar portions CL extend through the stacked body 100 inthe stacking direction and further pierce the gate layer 80, theinsulating layer 44, the semiconductor layer 14, and the semiconductorlayer 13 to reach the semiconductor layer 12.

FIG. 3 is an enlarged cross-sectional view of portion A of FIG. 2.

The columnar portion CL includes a memory film 30, the semiconductorbody 20, and an insulative core film 50. The memory film 30 is a stackedfilm of insulating films including a tunneling insulating film 31, acharge storage film (a charge storage portion) 32, and a blockinginsulating film 33.

As shown in FIG. 2, the semiconductor body 20 is formed in a pipe-likeconfiguration extending to be continuous in the Z-direction through thestacked body 100 and the gate layer 80, and reaches the source layer SL.The core film 50 is provided on the inner side of the semiconductor body20 having the pipe-like configuration.

The upper end portion of the semiconductor body 20 is connected to thebit line BL via the contact Cb and the contact V1 shown in FIG. 1. Aside wall portion 20 a that is on the lower end side of thesemiconductor body 20 contacts the semiconductor layer 13 of the sourcelayer SL.

The memory film 30 is provided between the stacked body 100 and thesemiconductor body 20 and between the gate layer and the semiconductorbody 20, and surrounds the semiconductor body 20 from the outerperimeter side.

The memory film 30 extends to be continuous in the Z-direction throughthe stacked body 100 and the gate layer 80. The memory film 30 is notprovided at the side wall portion (the source contact portion) 20 a ofthe semiconductor body 20 contacting the semiconductor layer 13. Theside wall portion 20 a is not covered with the memory film 30. Thememory film 30 may be disposed at a portion of the outer perimeter ofthe semiconductor body 20 between the semiconductor body 20 and thesemiconductor layer 13.

The lower end portion of the semiconductor body 20 is continuous withthe side wall portion 20 a, is positioned lower than the side wallportion 20 a, and is positioned inside the semiconductor layer 12. Thememory film 30 is provided between the semiconductor layer 12 and thelower end portion of the semiconductor body 20. Accordingly, the memoryfilm 30 is divided in the Z-direction at the position of the side wallportion 20 a of the semiconductor body 20. The lower portion of thedivided memory film 30 is disposed at a position surrounding the outerperimeter of the lower end portion of the semiconductor body 20, andunder the bottom surface of the semiconductor body 20.

As shown in FIG. 3, the tunneling insulating film 31 is provided betweenthe semiconductor body 20 and the charge storage film 32 and contactsthe semiconductor body 20. The charge storage film 32 is providedbetween the tunneling insulating film 31 and the blocking insulatingfilm 33. The blocking insulating film 33 is provided between the chargestorage film 32 and the electrode layer 70.

The semiconductor body 20, the memory film 30, and the electrode layer70 (the cell gate CG) are included in a memory cell MC. The memory cellMC has a vertical transistor structure in which the electrode layer 70(the cell gate CG) surrounds the periphery of the semiconductor body 20with the memory film 30 interposed.

In the memory cell MC having the vertical transistor structure, thesemiconductor body 20 is, for example, a channel body of silicon; andthe electrode layer 70 (the cell gate CG) functions as a control gate.The charge storage film 32 functions as a data storage layer that storescharge injected from the semiconductor body 20.

The semiconductor memory device of the embodiment is a nonvolatilesemiconductor memory device that can freely and electricallyerase/program data and can retain the memory content even when the powersupply is OFF.

The memory cell MC is, for example, a charge trap memory cell. Thecharge storage film 32 has many trap sites that trap charge inside aninsulative film, and includes, for example, a silicon nitride film. Or,the charge storage film 32 may be a conductive floating gate surroundedwith an insulating body.

The tunneling insulating film 31 is used as a potential barrier when thecharge is injected from the semiconductor body 20 into the chargestorage film 32 or when the charge stored in the charge storage film 32is discharged into the semiconductor body 20. The tunneling insulatingfilm 31 includes, for example, a silicon oxide film.

The blocking insulating film 33 prevents the charge stored in the chargestorage film 32 from being discharged into the electrode layer 70. Also,the blocking insulating film 33 prevents back-tunneling of the chargefrom the electrode layer 70 into the columnar portion CL.

The blocking insulating film 33 includes, for example, a silicon oxidefilm. Or, the blocking insulating film 33 may have a stacked structureof a silicon oxide film and a metal oxide film. In such a case, thesilicon oxide film may be provided between the charge storage film 32and the metal oxide film; and the metal oxide film may be providedbetween the silicon oxide film and the electrode layer 70. The metaloxide film is, for example, an aluminum oxide film.

As shown in FIG. 1, the drain-side selection transistor STD is providedin the upper layer portion of the stacked body 100. The source-sideselection transistor STS is provided in the lower layer portion of thestacked body 100.

The drain-side selection transistor STD is a vertical transistor havingthe drain-side selection gate SGD described above (FIG. 2) as a controlgate; and the source-side selection transistor STS is a verticaltransistor having the source-side selection gate SGS described above(FIG. 2) as a control gate.

The portion of the semiconductor body 20 opposing the drain-sideselection gate SGD functions as a channel; and the memory film 30 thatis between the channel and the drain-side selection gate SGD functionsas a gate insulating film of the drain-side selection transistor STD.

The portion of the semiconductor body 20 opposing the source-sideselection gate SGS functions as a channel; and the memory film 30 thatis between the channel and the source-side selection gate SGS functionsas a gate insulating film of the source-side selection transistor STS.

Multiple drain-side selection transistors STD that are connected inseries via the semiconductor body 20 may be provided; and multiplesource-side selection transistors STS that are connected in series viathe semiconductor body 20 may be provided. The same gate potential isapplied to the multiple drain-side selection gates SGD of the multipledrain-side selection transistors STD; and the same gate potential isapplied to the multiple source-side selection gates SGS of the multiplesource-side selection transistors STS.

The multiple memory cells MC are provided between the drain-sideselection transistor STD and the source-side selection transistor STS.The multiple memory cells MC, the drain-side selection transistor STD,and the source-side selection transistor STS are connected in series viathe semiconductor body 20 of the columnar portion CL, and are includedin one memory string. For example, the memory strings have a staggeredarrangement in a planar direction parallel to the XY plane; and themultiple memory cells MC are provided three-dimensionally in theX-direction, the Y-direction, and the Z-direction.

The side wall portion 20 a of the semiconductor body 20 contacts thesemiconductor layer 13 doped with the impurity (e.g., phosphorus); andthe side wall portion 20 a also includes the impurity (e.g.,phosphorus). The impurity concentration of the side wall portion 20 a ishigher than the impurity concentration of the portion of thesemiconductor body 20 opposing the stacked body 100. The impurityconcentration of the side wall portion 20 a is higher than the impurityconcentration of the channel of the memory cell MC, the impurityconcentration of the channel of the source-side selection transistorSTS, and the impurity concentration of the channel of the drain-sideselection transistor STD.

By heat treatment described below, the impurity (e.g., phosphorus) isdiffused from the side wall portion 20 a into a portion 20 b of thesemiconductor body 20 opposing the gate layer 80. The impurity (e.g.,phosphorus) is included also in a portion between the side wall portion20 a and the portion 20 b of the semiconductor body 20 (a portioncorresponding to the insulating layer 44).

The impurity is not diffused into the entire region of the portion 20 bof the semiconductor body 20; and the impurity concentration of theregion of the portion 20 b on the stacked body 100 side is lower thanthe impurity concentration of the region of the portion 20 b on the sidewall portion 20 a side. The impurity concentration in the portion 20 bhas a gradient decreasing from the side wall portion 20 a side towardthe stacked body 100 side. The impurity concentration of the region ofthe portion 20 b on the side wall portion 20 a side is higher than theimpurity concentration of the portion of the semiconductor body 20opposing the stacked body 100.

In a read operation, electrons are supplied to the channel of the memorycell MC from the source layer SL via the side wall portion 20 a of thesemiconductor body 20. At this time, a channel (an n-type channel) canbe induced in the entire region of the portion 20 b of the semiconductorbody 20 by applying an appropriate potential to the gate layer 80. Thememory film 30 that is between the gate layer 80 and the portion 20 b ofthe semiconductor body 20 functions as a gate insulating film.

Although there may be cases where it is difficult to cut off theconduction of the portion 20 b using the potential control of the gatelayer 80 because the portion 20 b of the semiconductor body 20 includesthe impurity as described above, the source-side selection transistorSTS performs the function of the cut-off. The impurity recited above isnot diffused to the channel of the source-side selection transistor STS.

The distance between the portion 20 b and the side wall portion 20 a ofthe semiconductor body 20 is less than the thickness of the gate layer80. The distance between the portion 20 b and the side wall portion 20 aof the semiconductor body 20 substantially corresponds to the totalthickness of the thickness of the semiconductor layer 14 and thethickness of the insulating layer 44.

As described below, the thick gate layer 80 is used as an etchingstopper when forming the slits ST. Therefore, the semiconductor layer 14can be thin. The thickness of the gate layer 80 is, for example, about200 nm; and the thickness of the semiconductor layer 14 is, for example,about 30 nm. Accordingly, the distance of diffusing the impurity fromthe side wall portion 20 a to the portion of the semiconductor body 20opposing the insulating layer 44 can be short; and the diffusion of theimpurity to the region where channel induction by the gate layer 80 isdifficult can be controlled easily.

Also, the gate layer 80 can function as a GIDL (gate induced drainleakage) generator in an erase operation because the portion 20 b of thesemiconductor body 20 opposing the gate layer 80 includes the impurity.

Holes generated by applying a high electric field to the portion 20 b ofthe semiconductor body 20 by applying an erasing potential (e.g.,several volts) to the gate layer 80 are supplied to the channel of thememory cell MC; and the channel potential is increased. Then, by settingthe potentials of the cell gates CG to, for example, the groundpotential (0 V), the holes are injected into the charge storage film 32by the potential difference between the semiconductor body 20 and thecell gates CG; and the erase operation of the data is performed.

A method for manufacturing the semiconductor device of the embodimentwill now be described with reference to FIG. 4 to FIG. 17. The crosssections of FIG. 4 to FIG. 17 correspond to the cross section of FIG. 2.

As shown in FIG. 4, the insulating layer 41 is formed on the substrate10. The layer 11 that includes the metal is formed on the insulatinglayer 41. The layer 11 that includes the metal is, for example, atungsten layer or a tungsten silicide layer.

The semiconductor layer (the first semiconductor layer) is formed on thelayer 11 including the metal. The semiconductor layer 12 is, forexample, a polycrystalline silicon layer doped with phosphorus. Thethickness of the semiconductor layer 12 is, for example, about 200 nm.

A protective film 42 is formed on the semiconductor layer 12. Theprotective film 42 is, for example, a silicon oxide film.

A sacrificial layer 91 is formed on the protective film 42. Thesacrificial layer 91 is, for example, an undoped polycrystalline siliconlayer. The thickness of the sacrificial layer 91 is, for example, about30 nm.

A protective film 43 is formed on the sacrificial layer 91. Theprotective film 43 is, for example, a silicon oxide film.

The semiconductor layer (the second semiconductor layer) 14 is formed onthe protective film 43. The semiconductor layer 14 is, for example, apolycrystalline silicon layer that is undoped or is doped withphosphorus. The thickness of the semiconductor layer 14 is, for example,about 30 nm.

The insulating layer 44 is formed on the semiconductor layer 14. Theinsulating layer 44 is, for example, a silicon oxide layer.

The gate layer 80 is formed on the insulating layer 44. The gate layer80 is, for example, a polycrystalline silicon layer doped withphosphorus. The thickness of the gate layer 80 is thicker than thethickness of the semiconductor layer 14 and the thickness of theinsulating layer 44 and is, for example, about 200 nm.

As shown in FIG. 5, the stacked body 100 is formed on the gate layer 80.The insulating layer (a second layer) 72 and the sacrificial layer (afirst layer) 71 are stacked alternately on the gate layer 80. Theprocess of alternately stacking the insulating layer 72 and thesacrificial layer 71 is repeated; and the multiple sacrificial layers 71and the multiple insulating layers 72 are formed on the gate layer 80.The insulating layer 45 is formed on the sacrificial layer 71 of theuppermost layer. For example, the sacrificial layer 71 is a siliconnitride layer; and the insulating layer 72 is a silicon oxide layer. Theinsulating layer 45 is, for example, a silicon oxide layer.

The thickness of the gate layer 80 is thicker than the thickness of onelayer of the sacrificial layers 71 and the thickness of one layer of theinsulating layers 72.

As shown in FIG. 6, multiple memory holes MH are formed in the layershigher than the semiconductor layer 12. The memory holes MH are formedby reactive ion etching (RIE) using a not-illustrated mask layer. Thememory holes MH pierce the stacked body 100, the gate layer 80, theinsulating layer 44, the semiconductor layer 14, the protective film 43,the sacrificial layer 91, and the protective film 42 and reach thesemiconductor layer 12. The bottoms of the memory holes MH arepositioned inside the semiconductor layer 12.

The multiple sacrificial layers (the silicon nitride layer) 71 and themultiple insulating layers (the silicon oxide layers) 72 are etchedcontinuously using the same gas (e.g., a CF-based gas) without switchingthe gas type. At this time, the gate layer (the polycrystalline siliconlayer) 80 functions as an etching stopper; and the etching is stoppedonce at the position of the gate layer 80. The etching rate fluctuationbetween the multiple memory holes MH is absorbed by the thick gate layer80; and the fluctuation of the bottom positions between the multiplememory holes MH is reduced.

Subsequently, step etching of each layer is performed by switching thegas type. The remaining portion of the gate layer 80 is etched using theinsulating layer 44 as a stopper; the insulating layer 44 is etchedusing the semiconductor layer 14 as a stopper; the semiconductor layer14 is etched using the protective film 43 as a stopper; the protectivefilm 43 is etched using the sacrificial layer 91 as a stopper; thesacrificial layer 91 is etched using the protective film 42 as astopper; and the protective film 42 is etched using the semiconductorlayer 12 as a stopper. Then, the etching is stopped partway through thethick semiconductor layer 12.

The control of the etching stop position of the hole patterning for thestacked body 100 having a high aspect ratio is performed easily usingthe thick gate layer 80.

As shown in FIG. 7, the columnar portions CL are formed inside thememory holes MH. The memory film 30 is formed conformally along the sidesurfaces and bottoms of the memory holes MH; the semiconductor body 20is formed conformally along the memory film 30 on the inner side of thememory film 30; and the core film 50 is formed on the inner side of thesemiconductor body 20.

Subsequently, as shown in FIG. 8, the multiple slits ST are formed inthe stacked body 100. The slits ST are formed by RIE using anot-illustrated mask layer. The slits ST pierce the stacked body 100 andreach the gate layer 80.

Similarly to the formation of the memory holes MH, the multiplesacrificial layers 71 and the multiple insulating layers 72 are etchedcontinuously using the same gas (e.g., a CF-based gas) without switchingthe gas type. At this time, the gate layer 80 functions as an etchingstopper; and the etching of the slit patterning is stopped once at theposition of the gate layer 80. The etching rate fluctuation between themultiple slits ST is absorbed by the thick gate layer 80; and thefluctuation of the bottom positions between the multiple slits ST isreduced.

Subsequently, step etching of each layer is performed by switching thegas type. The remaining portion of the gate layer 80 is etched using theinsulating layer 44 as a stopper. As shown in FIG. 9, the insulatinglayer 44 is exposed at the bottoms of the slits ST.

Then, the insulating layer 44 is etched using the semiconductor layer 14as a stopper; and the semiconductor layer 14 is etched using theprotective film 43 as a stopper. As shown in FIG. 10, the sacrificiallayer 91 is exposed at the bottoms of the slits ST.

The control of the etching stop position of the slit patterning for thestacked body 100 having a high aspect ratio is performed easily usingthe thick gate layer 80. The bottom position control of the slits ST isperformed with high precision and easily by the subsequent step etching.The bottoms of the slits ST stop inside the sacrificial layer 91 withoutthe slits ST extending through the sacrificial layer 91.

At the side surfaces and bottoms of the slits ST as shown in FIG. 11, aliner film 161 is formed conformally along the side surfaces and bottomsof the slits ST. The liner film 161 is, for example, a silicon nitridefilm.

The liner film 161 formed on the bottoms of the slits ST is removed by,for example, RIE. As shown in FIG. 12, the sacrificial layer 91 isexposed at the bottoms of the slits ST.

Then, the sacrificial layer 91 is removed by etching through the slitsST. For example, the sacrificial layer 91 which is a polycrystallinesilicon layer is removed by supplying hot TMY (trimethyl-2 hydroxyethylammonium hydroxide) through the slits ST.

The sacrificial layer 91 is removed; and an air gap 90 is formed betweenthe semiconductor layer 12 and the semiconductor layer 14 as shown inFIG. 13. For example, the protective films 42 and 43 which are siliconoxide films protect the semiconductor layers 12 and 14 from the etchingusing hot TMY. Also, the liner film (e.g., the silicon nitride film) 161formed on the side surfaces of the slits ST prevents side etching of thegate layer 80 and the semiconductor layer 14 from the slit ST side.

A portion of the side wall of the columnar portion CL is exposed in theair gap 90. A portion of the memory film 30 is exposed.

The portion of the memory film 30 exposed in the air gap 90 is removedby etching through the slits ST. For example, the memory film 30 isetched by CDE (chemical dry etching).

At this time, the protective films 42 and 43 that are the same type offilm included in the memory film 30 also are removed. The liner film 161formed on the side surfaces of the slits ST is a silicon nitride filmthat is the same type of film as the charge storage film 32 included inthe memory film 30; but the film thickness of the liner film 161 isthicker than the film thickness of the charge storage film 32; and theliner film 161 remains on the side surfaces of the slits ST.

The liner film 161 prevents side etching of the sacrificial layers 71,the insulating layers 72, and the insulating layer 44 from the slit STside when removing the portion of the memory film 30 recited above thatis exposed in the air gap 90. Etching from the lower surface side of theinsulating layer 44 also is prevented because the lower surface of theinsulating layer 44 is covered with the semiconductor layer 14.

By removing the portion of the memory film 30, the memory film 30 isdivided vertically at the portion of the side wall portion 20 a as shownin FIG. 14. The etching time is controlled so that the memory film (thegate insulating film) 30 between the gate layer 80 and the semiconductorbody 20 is not etched.

Also, the etching time is controlled so that the memory film 30 alsoremains between the semiconductor layer 12 and the semiconductor body 20below the side wall portion 20 a. The lower end portion of thesemiconductor body 20 below the side wall portion 20 a is held in astate of being supported by the semiconductor layer 12 with the memoryfilm 30 interposed.

The portion of the memory film 30 recited above is removed; and aportion (the side wall portion 20 a) of the semiconductor body 20 isexposed in the air gap 90 as shown in FIG. 14.

As shown in FIG. 15, the semiconductor layer (the third semiconductorlayer) 13 is formed inside the air gap 90. The semiconductor layer 13is, for example, a polycrystalline silicon layer doped with phosphorus.

A gas that includes silicon is supplied to the air gap 90 through theslits ST; the semiconductor layer 13 is epitaxially grown from the uppersurface of the semiconductor layer 12, the lower surface of thesemiconductor layer 14, and the side wall portion 20 a of thesemiconductor body 20 exposed in the air gap 90. The semiconductor layer13 is buried in the air gap 90.

Because the semiconductor layer 14 which is a polycrystalline siliconlayer is formed also on the upper surface of the air gap 90, theepitaxial growth of the semiconductor layer 13 also can be performedfrom the upper surface side of the air gap 90; and a reduction of thetime necessary to form the semiconductor layer 13 is realized.

The side wall portion 20 a of the semiconductor body 20 contacts thesemiconductor layer 13. At the stage where the columnar portion CL isformed, the semiconductor body 20 substantially does not include animpurity from the upper end to the lower end. The semiconductor layer 13is epitaxially grown by high-temperature heat treatment; and theimpurity (e.g., phosphorus) is doped also into the side wall portion 20a of the semiconductor body 20 at this time.

The impurity (the phosphorus) also is thermally diffused in theextension direction of the semiconductor body 20 from the side wallportion 20 a by the heat treatment of the epitaxial growth of thesemiconductor layer 13 or heat treatment in a subsequent process. Theimpurity is diffused to at least the portion of the semiconductor body20 opposing the insulating layer 44. The impurity is diffused to theregion where channel induction by the gate layer 80 is difficult.

As described above, the gate layer 80 performs the role of an absorptionlayer of the etching rate difference when forming the memory holes MHand the slits ST. Accordingly, it is unnecessary to set thesemiconductor layer 14 to be thick. Therefore, the distance of diffusingthe impurity from the side wall portion 20 a of the semiconductor body20 to the portion opposing the insulating layer 44 can be set to beshort. For example, the diffusion distance is about 50 nm; and theimpurity can be diffused easily and reliably into the portion of thesemiconductor body 20 opposing the insulating layer 44.

If the impurity is diffused to the portion 20 b of the semiconductorbody 20 opposing the gate layer 80, as described above, the holes due toGIDL are generated in the portion 20 b; and an erase operation thatutilizes these holes is possible.

Then, the sacrificial layers 71 are removed using an etchant or anetching gas supplied through the slits ST after removing the liner film161 or in the same process as the removal of the liner film 161. Forexample, the sacrificial layers 71 which are silicon nitride layers areremoved using an etchant including phosphoric acid.

The sacrificial layers 71 are removed; and air gaps 75 are formedbetween the insulating layers 72 adjacent to each other above and belowas shown in FIG. 16. The air gap 75 is formed also between theinsulating layer 45 and the insulating layer 72 of the uppermost layer.

The multiple insulating layers 72 contact the side surfaces of thecolumnar portions CL to surround the side surfaces of the multiplecolumnar portions CL. The multiple insulating layers 72 are supported bysuch a physical bond with the multiple columnar portions CL; and the airgaps 75 between the insulating layers 72 are maintained.

As shown in FIG. 17, the electrode layers 70 are formed in the air gaps75. For example, the electrode layers 70 are formed by CVD (chemicalvapor deposition). A source gas is supplied to the air gaps 75 throughthe slits ST. The electrode layers 70 formed on the side surfaces of theslits ST are removed.

Subsequently, as shown in FIG. 2, the insulating film 163 is buried intothe slits ST.

The sacrificial layer 91 is not limited to a polycrystalline siliconlayer and may be, for example, a silicon nitride layer. The protectivefilms 42 and 43 may not be provided in the case of a combination of thesacrificial layer 91 which is a silicon nitride layer and thesemiconductor layers 12 and 14 which are polycrystalline silicon layers.

FIG. 18 is a schematic cross-sectional view showing another example ofthe memory cell array of the embodiment.

The semiconductor layer 13 is provided along the upper surface of thesemiconductor layer 12, the lower surface of the semiconductor layer 14,and the side wall portion 20 a of the semiconductor body 20; and the airgap 90 remains between the semiconductor layer 13 provided on the uppersurface of the semiconductor layer 12 and the semiconductor layer 13provided on the lower surface of the semiconductor layer 14.

If the semiconductor layer 13 is buried in the air gap 90 in aninsufficient state and a void occurs inside the semiconductor layer 13,movement of the void in a subsequent high-temperature heat treatmentprocess may cause an electrical disconnection of the side wall portion20 a of the semiconductor body 20.

As in FIG. 18, voids that can move do not exist if the semiconductorlayer 13 is formed as a thin film along the upper surface of thesemiconductor layer 12, the lower surface of the semiconductor layer 14,and the side wall portion 20 a of the semiconductor body 20 and the airgap 90 remains on the inner side of the semiconductor layer 13.

A control circuit controlling the memory cell array 1 may be provided ata surface of the substrate 10 under the memory cell array 1.

Or the control circuit may be provided at a periphery of the memory cellarray 1.

FIG. 19 is a schematic cross-sectional view a cell region 200 and aperipheral region 300. The memory cell array 1 is provided in the cellregion 200. A control circuit 301 is provided in the peripheral region300.

An isolation portion 110 is provided in the substrate 10 in theperipheral region 300. The control circuit 301 is provided, for example,in a region surrounded by the isolation portion 110.

The control circuit 301 includes a plurality of transistors Tr. Thetransistor Tr includes a source/drain region 111, a gate electrode 113,and a gate insulating film 112. The source/drain region 111 is formed inthe surface of the substrate 10. The gate insulating film 112 isprovided between the gate electrode 113 and the surface of the substrate1.

An insulating layer 114 is provided on the substrate 1 so as to coverthe gate electrode 113. An insulating layer 115 is provided on theinsulating layer 114. An upper surface of the insulating layer 115 andan upper surface of the stacked body 100 are planarized withapproximately the same height.

Contact vias 116,117 pierces the insulating layer 115 and the insulatinglayer 114. The contact via 116 reaches the source/drain region 111, andthe contact via 117 reaches the gate electrode 113.

The substrate 10 in the cell region 200 includes a p-type semiconductorregion 10 a and an n-type semiconductor region 10 b provided on thep-type semiconductor region 10 a. The p-type semiconductor region 10 ais, for example, a silicon region doped with boron. The n-typesemiconductor region 10 b is, for example, a silicon region doped withphosphorus.

The source layer SL is provided on the substrate 10 in the cell region200 without an insulating layer interposed between the substrate 10 andthe source layer SL. For example, the source layer SL does not contain ametal. The semiconductor layer (for example, an n-type polycrystallinesilicon layer doped with phosphorus) 12 of the source layer SL contactsthe n-type semiconductor region 10 b of the substrate 10.

As in the above embodiment, the side wall portion 20 a of thesemiconductor body 20 contacts the semiconductor layer (for example, ann-type polycrystalline silicon layer doped with phosphorus) 13.

The insulating layer 114 in the peripheral region 300 is formed also onthe substrate 10 in the cell region 200, and then, the insulating layer114 in the cell region 200 is removed by etching. The source layer SL isformed in a space generated by removal of the insulating layer 114 inthe cell region 200.

Such a structure can lower the height of the upper surface of thestacked body 100 as compared with a structure in which the source layerSL, the gate layer 80, and the stacked body 100 are provided on theinsulating layer 114 remaining in the cell region 200 and not removed.Thus, the height of the surface of the insulating layer 115 in theperipheral region 300 can be lowered. This reduces the aspect ratios ofthe contact holes for forming the contact vias 116,117 in the peripheralregion 300, and makes it possible to shorten the time of RIE for formingthe contact hole.

Increasing the thickness of the n-type semiconductor region 10 b of thesubstrate 10 can lower the resistance of the source layer SL.

The p-type semiconductor region 10 a and the n-type semiconductor region10 b of the substrate 10 form a p-n junction. The source layer SL andthe control circuit 301 are not electrically connected through thesubstrate 10 by the reverse voltage applied to the p-n junction indriving the device.

After the process shown in the above FIG. 17, a conductive material 165may be formed in the slit ST. After an insulating film 166 is formed onthe side wall of the slit ST, the conductive material 165 is buried inthe slit ST. A lower end portion of the conductive material 165 contactsthe semiconductor layer 13 of the source layer SL. An upper end portionof the conductive material 165 contacts an upper interconnect layer (forexample, source layer SL) not shown.

The conductive material 165 provided in the slit ST is formed in a plateshape. Or the conductive material 165 may be formed in a columnar shape.

As shown in FIG. 20, the lower end portion of the columnar portion CLmay be reached into the substrate 10. The memory hole MH for forming thecolumnar portion CL pierces the source layer SL and reaches thesubstrate 10. In this example, the depth control of the memory hole MHis not required. Thus, the etching selectivity between a material of thesacrificial layer 71 and the insulating layer 72, and a silicon can belower than the example of FIG. 19. This provides more options of etchinggas. Thus, the etching rate for forming the memory hole MH can behigher, and the throughput can be improved.

As previously described, the insulating layer 114 in the peripheralregion 300 is temporarily formed on the substrate 10 in the cell region200, and then the insulating layer 114 in the cell region 200 is removedby etching. As shown in FIG. 21, in addition to the source layer SL, thegate layer 80 may be also formed in the space generated by removal ofthe insulating layer 114 in the cell region 200. The height of the uppersurface of the gate layer 80 is approximately the same level as theheight of the upper surface of the insulating layer 114 in theperipheral region 300. Such a structure further reduces the height ofthe stacked body 100 as compared with the structure of FIGS. 19 and 20.Therefore, the etching time of the contact holes for the contact vias116,117 can be further shortened.

At the RIE of the multiple sacrificial layers 71 and the multipleinsulating layers 72 for forming the memory hole MH, the gate layer 80is easily charged positively by ion, the substrate 10 is easily chargednegatively by plasma. This generates a bias between the gate layer 80and the substrate 10. The bias may cause arcing between the gate layer80 and the substrate 10.

As shown in FIG. 22, a conductive pattern 82 is formed at a kerf portionof a chip periphery. A connection 81 connects the conductive pattern 82and the gate layer 80 in the cell region 200 each other. This structurecan discharge the positive charge charged in the gate layer 80.

The connection 81 and the conductive pattern 82 are formed in the samelayer as the gate layer 80. The connection and the conductive pattern 82are made of the same material (for example polycrystalline silicon) as amaterial of the gate layer 80. After RIE of the memory hole MH, theconnection 81 is divided, and thus the gate layer 80 and the conductivepattern 82 are electrically separated.

Or, as shown in FIG. 23, the gate layer 80 and the source layer SL maybe connected each other by a plug 170. The plug 170 is provided betweenthe peripheral portion 80 b of the gate layer 80 and the source layerSL. The plug 170 electrically connects the gate layer 80 and the sourcelayer SL. The plug 170 and the peripheral portion 80 b of the gate layer80 are provided in the peripheral region 300.

The source layer SL contacts the substrate 10. Therefore, the positivecharge charged in the gate layer 80 is discharged into the substrate 10through the plug 170 and the source layer SL. It is not necessary toform the conductive pattern connected to the gate layer 80 in the kerfportion.

After RIE of the memory hole MH, a separation portion 167 is formed. Theseparation portion 167 electrically separates a cell portion 80 a of thegate layer 80 from the source layer SL. The separation portion 167separates the gate layer 80 into the cell portion 80 a and theperipheral portion 80 b. The cell portion 80 a of the gate layer 80 isprovided at the cell region 200. The multiple columnar portions CLpierce the cell portion 80 a.

Although a silicon nitride layer is illustrated as the first layer 71 inthe embodiment recited above, a metal layer or a silicon layer dopedwith an impurity may be used as the first layer 71. In such a case, thefirst layer 71 is used as the electrode layer 70 as-is; and the processof replacing the first layer 71 with the electrode layer is unnecessary.

By removing the second layer 72 by etching through the slits ST, thesecond layer 72 may be an air gap between the electrode layers 70adjacent to each other above and below.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modification as would fall within the scope andspirit of the inventions.

What is claimed is:
 1. A semiconductor device, comprising: a firstsemiconductor layer; a stacked body provided above the firstsemiconductor layer, the stacked body including a plurality of electrodelayers stacked in a first direction; and a columnar portion including asecond semiconductor layer and a charge storage film, wherein the secondsemiconductor layer extends through the stacked body and reaches thefirst semiconductor layer in the first direction and includes a sidewall portion in contact with the first semiconductor layer, the chargestorage film includes a first portion between the plurality of electrodelayers and the second semiconductor layer, and a second portion betweenthe second semiconductor layer and the first semiconductor layer, thefirst portion and the second portion are completely separated from eachother in the first direction by the first semiconductor layer, and theside wall portion of the second semiconductor layer is not covered withthe charge storage film.
 2. The semiconductor device according to claim1, wherein the first semiconductor layer includes an impurity.
 3. Thesemiconductor device according to claim 1, further comprising a gatelayer provided between the first semiconductor layer and the stackedbody, the gate layer being thicker than a thickness of one layer of theplurality of electrode layers.
 4. The semiconductor device according toclaim 3, wherein a distance between the side wall portion and a portionof the second semiconductor layer opposing the gate layer is less than athickness of the gate layer.
 5. The semiconductor device according toclaim 1, wherein an impurity concentration of the side wall portion ofthe second semiconductor layer is higher than an impurity concentrationof a portion of the second semiconductor layer opposing the stackedbody.
 6. The semiconductor device according to claim 3, wherein animpurity concentration of a first portion of the second semiconductorlayer opposing the gate layer is higher than an impurity concentrationof a second portion of the second semiconductor layer opposing thestacked body.
 7. The semiconductor device according to claim 3, whereinthe plurality of electrode layers include: a drain-side selection gatethinner than the gate layer, the drain-side selection gate being atleast one layer; a source-side selection gate provided between thedrain-side selection gate and the gate layer, the source-side selectiongate being at least one layer and being thinner than the gate layer; anda plurality of cell gates opposing the charge storage film and beingprovided between the drain-side selection gate and the source-sideselection gate, the plurality of cell gates each being thinner than thegate layer.
 8. The semiconductor device according to claim 3, whereinthe gate layer is a silicon layer including phosphorus.
 9. Thesemiconductor device according to claim 1, wherein the firstsemiconductor layer is a silicon layer including phosphorus.
 10. Thesemiconductor device according to claim 3, further comprising a layerincluding a metal, the first semiconductor layer being provided betweenthe gate layer and the layer including the metal.
 11. The semiconductordevice according to claim 1, wherein the charge storage film iscontinuous in the first direction between the stacked body and thesecond semiconductor layer.
 12. The semiconductor device according toclaim 3, wherein the charge storage film is provided between the gatelayer and the second semiconductor body.
 13. The semiconductor deviceaccording to claim 3, wherein a potential causing GIDL (gate induceddrain leakage) to occur in a portion of the second semiconductor layeropposing the gate layer is applied to the gate layer in an eraseoperation.
 14. The semiconductor device according to claim 1, wherein anair gap is formed in the first semiconductor layer.
 15. Thesemiconductor device according to claim 1, further comprising asubstrate, the first semiconductor layer being provided between thesubstrate and the stacked body layer, the first semiconductor layercontacting the substrate.
 16. The semiconductor device according toclaim 15, wherein the substrate includes an n-type semiconductor regioncontacting the first semiconductor layer, and a p-type semiconductorregion, the n-type semiconductor region and the p-type semiconductorregion forming a p-n junction.
 17. The semiconductor device according toclaim 15, wherein the second semiconductor layer pierces the firstsemiconductor layer, and a lower end portion of the second semiconductorlayer reaches the substrate.